Band-Gap Engineering: Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface (Adv. Mater. Interfaces 4/2015)
نویسندگان
چکیده
منابع مشابه
Semiconductor nanocrystals: structure, properties, and band gap engineering.
Semiconductor nanocrystals are tiny light-emitting particles on the nanometer scale. Researchers have studied these particles intensely and have developed them for broad applications in solar energy conversion, optoelectronic devices, molecular and cellular imaging, and ultrasensitive detection. A major feature of semiconductor nanocrystals is the quantum confinement effect, which leads to spat...
متن کاملEnergy band-gap engineering of graphene nanoribbons.
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurem...
متن کاملBand Gap Engineering of Two-Dimensional Nitrogene
In our previous study, we have predicted the novel two-dimensional honeycomb monolayers of pnictogen. In particular, the structure and properties of the honeycomb monolayer of nitrogen, which we call nitrogene, are very unusual. In this paper, we make an in-depth investigation of its electronic structure. We find that the band structure of nitrogene can be engineered in several ways: controllin...
متن کاملBand gap engineering of MoS2 upon compression
We study the electronic structure of MoS2 upon both compressive and tensile strains with firstprinciples density-functional calculations. We consider monolayer, bilayer, few-layer and bulk MoS2 in the ±15 % strain range, relevant for recent experiments. We assess the stability of the compression calcualting the critical strain that results in the on-set of buckling for nanoribbons of different ...
متن کاملEngineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration
We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2015
ISSN: 2196-7350
DOI: 10.1002/admi.201570020